(China (Mainland))
Product Summary
The 2MBI75N-120 is an IGBT module. The device is suitable for High Power Switching, A.C. Motor Controls, D.C. Motor Controls and Uninterruptible Power Supply.
Parametrics
2MBI75N-120 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200 V; (2)Gate -Emitter Voltage VGES: ± 20 V; (3)collector current, Continuous, IC: 75A; 1ms, IC PULSE: 150A; Continuous, -IC: 75A; 1ms, -IC PULSE: 150A; (4)Max. Power Dissipation, PC: 600 W; (5)Operating Temperature, Tj: +150℃; (6)Storage Temperature, Tstg: -40 to +125℃; (7)Isolation Voltage A.C. 1min, Vis: 2500 V.
Features
2MBI75N-120 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Overcurrent Limiting Function (4~5 Times Rated Current).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2MBI75N-120 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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