Product Summary

The CY7C1049D-10VXI is a high-performance CMOS static RAM organized as 512K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the CY7C1049D-10VXI is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).

Parametrics

CY7C1049D-10VXI absolute maximum ratings: (1)Storage Temperature:–65 to +150℃; (2)Ambient Temperature with Power Applied:–55 to +125℃; (3)Supply Voltage on VCC to Relative GND: –0.5V to +6.0V; (4)DC Voltage Applied to Outputs in High Z State:–0.5V to VCC + 0.5V; (5)DC Input Voltage: –0.5V to VCC + 0.5V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: >2001V; (8)Latch-Up Current: >200 mA.

Features

CY7C1049D-10VXI features: (1)Pin- and function-compatible with CY7C1049B; (2)High speed: tAA = 10 ns ; (3)Low active power: ICC = 90 mA @ 10 ns ; (4)Low CMOS Standby power: ISB2 = 10 mA; (5)2.0V Data Retention; (6)Automatic power-down when deselected; (7)TTL-compatible inputs and outputs; (8)Easy memory expansion with CE and OE features; (9)Available in lead-free 36-Lead (400-Mil) Molded SOJ package.

Diagrams

CY7C1049D-10VXI logic block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
CY7C1049D-10VXI
CY7C1049D-10VXI
Cypress Semiconductor
SRAM 4M FAST ASYNC HI SPD IND
Data Sheet
0-1: $5.63
1-25: $4.87
25-100: $4.61
100-250: $3.84
CY7C1049D-10VXIT
CY7C1049D-10VXIT
Cypress Semiconductor
SRAM 4M FAST ASYNC HI SPD IND
Data Sheet
0-334: $3.88
334-500: $3.62
500-1000: $3.49
1000-2000: $3.36